Trench MOS Barrier Schottky Rectifier
Description
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VT10200C-M3
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.58 V at IF = 2.5 A
TMBS ®
TO-220AB
FEATURES Trench MOS Schottky technology Low forward voltage drop, low power losses High efficiency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: For definitions of
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