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IGC11T120T6L

Infineon
Part Number IGC11T120T6L
Manufacturer Infineon
Description IGBT
Published Feb 7, 2016
Detailed Description IGC11T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive t...
Datasheet PDF File IGC11T120T6L PDF File

IGC11T120T6L
IGC11T120T6L

Overview
IGC11T120T6L IGBT4 Low Power Chip FEATURES: • 1200V Trench + Field Stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules Applications: • low / medium power drives C G E Chip Type IGC11T120T6L VCE 1200V ICn 8A Die Size 3.
48 x 3.
19 mm2 Package sawn on foil MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Pad metal Backside metal Die bond Wire bond Reject ink dot size Recommended storage environment 3.
48 x 3.
19 1.
965 x 1.
716 0.
608 x 0.
608 mm 2 11.
1 / 5.
5 115 µm 150 mm 0 grd 1353 Photoimide 3200 nm AlSiCu Ni Ag –system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm Store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C Edited by IN FINEON Technologies , AIM PMD D CID CLS , L7613C, Edition 1, 31.
10.
2007 MAXIMUM RATINGS Parameter IGC11T120T6L Symbol Value Unit Collector-Emitter voltage , Tj=25 °C DC collector current, limited by Tjmax VC E IC 1200 1) V A Pulsed collector current, tp limited by Tjmax Ic p u l s 24 A Gate -Emitter voltage VGE ±20 V Operating junction temperature Short circuit data 2 ) V GE = 15V, VCC = 800V, Tvj = 150°C Tj tp -40 .
.
.
+175 10 °C µs Reverse bias safe operating area 2 ) (RBSOA) 1) depending on thermal properties of assembly IC max = 16 A, VCE max = 1200V, Tvj max= 150°C 2) not subject to production test - verified by design/characterization STATIC CHARACTERISTICS (tested on wafer ), Tj =25 °C Parameter Symbol Conditions Value Unit min.
typ.
max.
Collector-Emitter breakdown voltage Collector-Emitter saturation voltage Gate -Emitter threshold voltage Zero gate voltage collector current Gate -Emitter leakage current Integrated gate res istor V(BR)CES VGE=0V , IC= 0.
5 m A 1200 VCE(s...


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