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IPI086N10N3G

Infineon
Part Number IPI086N10N3G
Manufacturer Infineon
Description Power-Transistor
Published Feb 14, 2016
Detailed Description IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level •...
Datasheet PDF File IPI086N10N3G PDF File

IPI086N10N3G
IPI086N10N3G

Overview
IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G OptiMOS™3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO 252) ID 100 V 8.
2 mW 80 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Package Marking PG-TO220-3 086N10N PG-TO262-3 086N10N PG-TO263-3 083N10N PG-TO252-3 082N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=73 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 58 320 110 ±20 125 -55 .
.
.
175 55/175/56 Unit A mJ V W °C 1)J-STD20 and JESD22 2) See figure 3 Rev.
2.
6 page 1 2013-07-09 IPP086N10N3 G IPI086N10N3 G IPB083N10N3 G IPD082N10N3 G Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area3) - - 1.
2 K/W - 62 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=75 µA 2 2.
7 3.
5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.
1 1 µA V DS=100 V, V GS=0 V, T j=125 °C - 10 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=73 A, TO 22...


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