MOSFET
Description
FDB86135 N-Channel Shielded Gate PowerTrench® MOSFET
FDB86135
N-Channel Shielded Gate PowerTrench® MOSFET
100V, 176A, 3.5mΩ
May 2013
Features
Shielded Gate MOSFET Technology Max RDS(on) = 3.5mΩ at VGS = 10V, ID = 75A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low
RDS(on) High Power and Current Handlin...
Fairchild Semiconductor
FDB86135 PDF File
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