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PTFB093608SV

Infineon

Thermally-Enhanced High Power RF LDMOS FET


Description
PTFB093608SV Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 920 – 960 MHz Description The PTFB093608SV is an LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange. Manufactured ...



Infineon

PTFB093608SV

PDF File PTFB093608SV PDF File


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