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HFW12N60S

Part Number	HFW12N60S
Manufacturer	SemiHow
Description	N-Channel MOSFET
Published	Mar 26, 2016
Detailed Description	HFW12N60S Jan 2013 HFW12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A FEATURES Originati...
Datasheet	HFW12N60S PDF File

Overview

HFW12N60S Jan 2013 HFW12N60S 600V N-Channel MOSFET BVDSS = 600 V RDS(on) typ = 0.
53 ȍ ID = 12 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 38 nC (Typ.
) Extended Safe Operating Area Lower RDS(ON) : 0.
53 ȍ7\S#9GS=10V 100% Avalanche Tested D2-PAK 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note ...

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