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KDS123E

KEC
Part Number KDS123E
Manufacturer KEC
Description SILICON EPITAXIAL PLANAR DIODE
Published Mar 26, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Low Forward Voltage Fast Reverse Recovery ...
Datasheet PDF File KDS123E PDF File

KDS123E
KDS123E

Overview
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Ultra- Small Surface Mount Package MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current VRM VR IFM IO 80 80 300* 100* Surge Current (10mS) IFSM 2* Power Dissipation PD 100 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Unit Rating.
Total Rating=Unit Rating 0.
7 UNIT V V mA mA A mW A G H KDS123E SILICON EPITAXIAL PLANAR DIODE C E B D 2 DIM MILLIMETERS 13 A 1.
60+_ 0.
20 B 0.
85+_ 0.
10 C 0.
70+_ 0.
10 D 0.
...


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