FEATURES
Access Times of 150, 200, 250 and 350ns Single 5V±10% Power Supply
Fast Byte Write (200µs or 1 ms)
Low Power CMOS: - 60 mA Active Current - 150 µA Standby Current
Fast Write Cycle Time - DATA Polling CMOS & TTL Compatible Inputs and Outputs
PYA28C16
2K X 8 EEPROM
Endurance: - 10,000 Write Cycles - 100,000 Write Cycles (optional)
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