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V8P12

Vishay
Part Number V8P12
Manufacturer Vishay
Description High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier
Published Apr 10, 2016
Detailed Description www.vishay.com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Recti...
Datasheet PDF File V8P12 PDF File

V8P12
V8P12

Overview
www.
vishay.
com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
53 V at IF = 4 A TMBS® eSMP® Series K 1 2 TO-277A (SMPC) K Cathode Anode 1 Anode 2 FEATURES • Very low profile - typical height of 1.
1 mm Available • Ideal for automated placement • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code; base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 8.
0 A TJ max.
Package 8.
0 A 120 V 140 A 100 mJ 0.
63 V 150 °C TO-277A (SMPC) Diode variations Single die TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications.
MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified  (“_X” denotes revision code e.
g.
A, B,) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test  MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load VRRM IF(AV) IFSM Non-repetitive avalanche energy at IAS = 2.
0 A, TJ = 25 °C Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C Operating junction and storage temperature range EAS IRRM TJ, TSTG V8P12 V812 120 8.
0 140 ...


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