N-Channel MOSFET
Description
HFP4N90
March 2014
HFP4N90
900V N-Channel MOSFET
BVDSS = 900 V RDS(on) typ ȍ ID = 4.0 A
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 30 nC (Typ.) Extended Safe Operating Area Lower RDS(ON)...
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