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HFP640G

N-Channel MOSFET

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HFP640G Feb 2015 HFP640G 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18 A FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ...

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