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HFP640

Shantou Huashan
Part Number HFP640
Manufacturer Shantou Huashan
Description N-Channel Enhancement Mode Field Effect Transistor
Published Jun 7, 2015
Detailed Description Shantou Huashan Electronic Devices Co.,Ltd. HFP640 N-Channel Enhancement Mode Field Effect Transistor █ General Descr...
Datasheet PDF File HFP640 PDF File

HFP640
HFP640

Overview
Shantou Huashan Electronic Devices Co.
,Ltd.
HFP640 N-Channel Enhancement Mode Field Effect Transistor █ General Description These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
And DC-DC&DC-AC Converters for Telecom,Industrial and Consumer Environment TO-220 █ Features 1- G 2-D 3-S • 18A,200V,RDS(on) <0.
18Ω@VGS =10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type:IRF640 █ Maximum Ratings（Ta=25℃ unless otherwise specified） Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Operating Junction Temperature -------------------------------------------------- 150℃ VDSS —— Drain-Source Voltage ---------------------------------------------------------- 200V VDGR —— Drain-Gate Voltage (RGS=20kΩ) ------------------------------------------------------------ 200V VGSS —— Gate-Source Voltage ------------------------------------------------------------------------ ±20V ID —— Drain Current (Continuous) ------------------------------------------------------------------- 18A PD —— Maximum Power Dissipation ------------------------------------------------------------- 125W IAR —— Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, d < 1%) ------------------------------------------------------ 18A EAS—— Single Pulse Avalanche Energy (starting Tj = 25℃, ID = IAR, VDD = 50 V) --------------------------------------------------- 320mJ EAR—— Repetitive Avalanche Energy(pulse width limited by Tj max, d < 1%) ---------------- 13.
4mJ █ Thermal Characteristics Symbol Rthj-case Rthj-amb Rth c-s Items Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink TO-220 Max 1.
0 Max 62.
5 Typ 0.
5 Unit ℃/W ℃/W ℃/W Shantou Huashan Electronic Devices Co.
,Ltd.
HFP640 █ Electrical Characteristics（Ta=25℃ unless otherwise specified） Symbo...


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