DatasheetsPDF.com

HFP640 Datasheet PDF

Shantou Huashan
Part Number HFP640
Manufacturer Shantou Huashan
Title N-Channel Enhancement Mode Field Effect Transistor
Description These power MOSFETs is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and r...
Features 1- G 2-D 3-S
• 18A,200V,RDS(on) 0.18Ω@VGS =10 V
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Equivalent Type:IRF640 █ Maximum Ratings(Ta=25℃ unless otherwise specified) Tstg——Storage Temperature ------------------------------------------------------ -55~150℃ Tj ——Opera...

File Size 352.58KB
Datasheet PDF File HFP640 PDF File


HFP640 HFP640 HFP640




Similar Ai Datasheet

HFP60N06 : Shantou Huashan Electronic Devices Co.,Ltd. HFP60N06 N-Channel Enhancement Mode Field Effect Transistor █ Applications • Servo motor control. • Power MOSFET gate drivers. • DC/DC converters • Other switching applications. █ Features • 60A, 60V(See Note), RDS(on) 11.5mVΩ@VGS = 10 V • Fast switching • 100% avalanche tested • Minimize input capacitance and gate charge • Exceptional dv/dt capability TO-220 1- G 2-D 3-S █ Maximum Ratings(Ta=25℃ unless otherwise specified) Tstg——Storage Temperature ------------------------------------------------------ -55~165℃ Tj ——Operating Junction Temperature -------------------------------------------------- 150℃ VDSS —— Drain-Source Voltage -----------.

HFP630 : Tstg Tj VD S S VDGR VG S ID PD Ta=25 (RGS=1M ) Tc=25 T c =25 Ta=25 N-Channel Enhancement Mode Field Effect Transistor HFP630 TO-220 55~150 55~150 200V 500V ±3 0 V 9 . 0A 72W 1G 2D 3S µ ± µ ±3 µ .

HFP630 : HFP630 July 2005 HFP630 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.34 ȍ ID = 9 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 22 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.34 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note 1.

HFP630A : HFP630A Jan 2016 HFP630A 200V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 12 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested BVDSS = 200 V RDS(on) typ ȍ ID = 9.0 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed Gate-Sour.

HFP634 : HFP634 July 2005 HFP634 250V N-Channel MOSFET BVDSS = 250 V RDS(on) typ ȍ ID = 8.1 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 30 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (No.

HFP640 : HFP640 July 2005 HFP640 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ = 0.145ȍ ID = 18 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 37 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.145 ȍ (Typ.) @VGS=10V ‰ 100% Avalanche Tested TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note.

HFP640A : HFP640A_HFS640A Oct 2016 HFP640A / HFS640A 200V N-Channel MOSFET Features ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ 100% Avalanche Tested ‰ RoHS Compliant Key Parameters Parameter BVDSS ID RDS(on), Typ Qg, Typ Value 200 18 0.14 22 HFP640A TO-220 HFS640A TO-220F Symbol Unit V A ȍ nC S D G S D G Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter TO-220 TO-220F VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Single .

HFP640G : HFP640G Feb 2015 HFP640G 200V N-Channel MOSFET BVDSS = 200 V RDS(on) typ ȍ ID = 18 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 29 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1.

HFP644 : HFP644 Dec 2005 HFP644 250V N-Channel MOSFET BVDSS = 250 V RDS(on) typ ȍ ID = 14 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 42 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25ఁ͚ – Continuous (TC = 100ఁ͚ – Pulsed (Note.

HFP6N60U : HFP6N60U HFP6N60U 600V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested July 2012 BVDSS = 600 V RDS(on) typ ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (.

HFP6N65U : HFP6N65U HFP6N65U 650V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested July 2012 BVDSS = 650 V RDS(on) typ ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (No.

HFP6N70U : HFP6N70U HFP6N70U 700V N-Channel MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16.0 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 1.8 ȍ 7\S #9GS=10V ‰ 100% Avalanche Tested March 2013 BVDSS = 700 V RDS(on) typ = 1.8 ȍ ID = 6.0 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (No.

HFP6N90 : HFP6N90 Dec 2005 HFP6N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ = 1.95 Ω ID = 6.0 A FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.95 Ω (Typ.) @VGS=10V  100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25℃) – Continuous (TC = 100℃) – Pulsed (Not.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)