P-Channel 1.8-V (G-S) MOSFET
Description
P-Channel 1.8-V (G-S) MOSFET
LESHAN RADIO COMPANY, LTD.
LSI1013XT1G S-LSI1013XT1G
FEATURES D TrenchFETr Power MOSFET: 1.8-V Rated D Gate-Source ESD Protected: 2000 V D High-Side Switching D Low On-Resistance: 1.2 W D Low Threshold: 0.8 V (typ) D Fast Switching Speed: 14 ns D S- Prefix for Automotive and Other Applications Requiring
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