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TSM250N02CX

Taiwan Semiconductor
Part Number TSM250N02CX
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Apr 23, 2016
Detailed Description TSM250N02CX 20V N-Channel Power MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance P...
Datasheet PDF File TSM250N02CX PDF File

TSM250N02CX
TSM250N02CX

Overview
TSM250N02CX 20V N-Channel Power MOSFET SOT-23 Pin Definition: 1.
Gate 2.
Source 3.
Drain Key Parameter Performance Parameter Value VDS VGS = 4.
5V RDS(on) (max) VGS = 2.
5V VGS = 1.
8V Qg 20 25 35 55 7.
7 Unit V mΩ nC Ordering Information Part No.
Package Packing TSM250N02CX RFG SOT-23 3kpcs / 7” Reel ● Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Absolute Maximum Ratings (TC = 25°C unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Power Dissipation @ TC = 25°C Operating Junction Temperature Storage Temperature Range TC = 25°C TC = 100°C VDS VGS ID IDM PD TJ TSTG Thermal Performance Parameter Symbol Thermal Resistance - Junction to Ambient RӨJA N-Channel MOSFET Limit 20 ±10 5.
8 3.
7 23.
2 1.
56 150 -55 to +150 Limit 80 Unit V V A A A W °C °C Unit °C/W 1/5 Version: A14 TSM250N02CX 20V N-Channel Power MOSFET Electrical Specifications (TC = 25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = 250µA VGS = 4.
5V, ID = 4A VGS = 2.
5V, ID = 3A VGS = 1.
8V, ID = 2A VDS = VGS, ID = 250µA BVDSS RDS(on) VGS(TH) 20 -- -- V -- 20 25 -- 27 35 mΩ -- 39 55 0.
4 0.
6 0.
8 V Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance (Note 2) Dynamic Total Gate Charge (Note 2,3) Gate-Source Charge (Note 2,3) Gate-Drain Charge (Note 2,3) VDS = 16V, VGS = 0V VDS = 16V, TJ = 85°C VGS = ±10V, VDS = 0V VDS = 10V, IS = 3A VDS = 10V, ID = 4A, VGS = 4.
5V Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, VGS = 0V, f = 1.
0MHz Turn-On Delay Time (Note 2,3) Turn-On Rise Time (Note 2,3) Turn-Off Delay Time (Note 2,3) Turn-Off Fall Time (Note 2,3) VDD = 10V, ID ...


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