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VB10170C-E3

Part Number	VB10170C-E3
Manufacturer	Vishay
Description	Dual High Voltage Trench MOS Barrier Schottky Rectifier
Published	May 3, 2016
Detailed Description	www.vishay.com VB10170C-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra ...
Datasheet	VB10170C-E3 PDF File

Overview

www.
vishay.
com VB10170C-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
57 V at IF = 2.
5 A TMBS ® TO-263AB K 2 1 FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 VB10170C PIN 1 K PIN 2 HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.
0 A ...

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