DatasheetsPDF.com

T835-600G

STMicroelectronics
Part Number T835-600G
Manufacturer STMicroelectronics
Description logic level and standard Triacs
Published May 9, 2016
Detailed Description BTA08, BTB08, T810 T835, T850 Datasheet Snubberless™, logic level and standard 8 A Triacs A2 G A2 A1 Features • On-...
Datasheet PDF File T835-600G PDF File

T835-600G
T835-600G



Overview
BTA08, BTB08, T810 T835, T850 Datasheet Snubberless™, logic level and standard 8 A Triacs A2 G A2 A1 Features • On-state rms current, IT(RMS) 8 A • Repetitive peak off-state voltage, VDRM / VRRM 600 V to 800 V • Triggering gate current, IGT 5 to 50 mA TO-220AB A2 IPAK G A2 A1 A2 G A2 A1 TO-220AB Ins.
D²PAK A2 G A1 A2 G A2 A1 A2 G A1 DPAK Description Available either in through-hole and surface-mount packages, these devices are suitable for general purpose AC switching.
They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits or for phase control operation in light dimmers and motor speed controllers, etc.
The Snubberless versions (BTA, BTB08_xxxxW and T8 series) are specially recommended for use on inductive loads, thanks to their high commutation performance.
Logic level versions are designed to interface directly with low power drivers such as Microcontrollers.
By using an internal ceramic pad, the BTA series provide voltage insulated tab (rated at 2500 VRMS) in compliance with UL standards (file ref.
: E81734).
Product status link BTA08 BTB08 T810 T835 T850 DS2114 - Rev 15 - August 2018 For further information contact your local STMicroelectronics sales office.
www.
st.
com BTA08, BTB08, T810, T835, T850 Characteristics 1 Characteristics Table 1.
Absolute maximum ratings (Tj = 25 °C unless otherwise stated) Symbol Parameter Value Unit IT(RMS) RMS on-state current (full sine wave) ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I2t I2t value for fusing dl/dt Critical rate of rise of on-state current IG = 2 x IGT, tr ≤ 100 ns IGM Peak gate current PG(AV) Average gate power dissipation Tstg Storage junction temperature range Tj Operating junction temperature range IPAK, DPAK,TO-220AB, D²PAK Tc = 110 °C 8 A TO-220AB Ins.
Tc = 100 °C f = 50 Hz f = 60 Hz t = 20 ms 80 A tp = 16.
7 ms 84 tp = 10 ms 36 A2s f = 120 Hz Tj =...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)