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BD436

Part Number	BD436
Manufacturer	SeCoS
Description	PNP General Purpose Transistor
Published	May 9, 2016
Detailed Description	Elektronische Bauelemente BD436 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halog...
Datasheet	BD436 PDF File

Overview

Elektronische Bauelemente BD436 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High Current Amplifier and Switching Applications TO-126 1Emitter 2Collector 3Base A E F N L M K B H J C D G REF.
A B C D E F G Millimeter Min.
Max.
7.
40 7.
80 2.
50 2.
90 10.
60 11.
00 15.
30 15.
70 3.
70 3.
90 3.
90 4.
10 2.
29 TYP.
REF.
H J K L M N Millimeter Min.
Max.
1.
10 1.
50 0.
45 0.
60 0.
66 0.
86 2.
10 2.
30 1.
17 1.
37 3.
00 3.
20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current -Continuous Collector Power Dissipation Maximum Junction to Ambient Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC RθJA TJ, TSTG Ratings -32 -32 -5 -4 1.
25 100 150, -55 ~ 150 Unit V V V A W °C / W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Collector - Base Breakdown Voltage Collector-emitter sustaining voltage 1 Emitter - Base Breakdown Voltage Collector Cut - Off Current Emitter Cut-Off Current DC Current Gain 1 Symbol V(BR)CBO VCEO(SUS) V(BR)EBO ICBO IEBO hFE Min.
-32 -32 -5 40 85 Typ.
- Max.
- -100 -1 375 Unit V V V µA mA Collector - Emitter Saturation Voltage 1 Base – Emitter Voltage 1 Transition frequency Note: 1.
Pulse test VCE(sat) VBE fT 50 3 -- -0.
5 V - -1 V - - MHz Test Conditions IC= -0.
1mA, IE=0 IC= -100mA, IB=0 IC=0, IE= -0.
1mA VCB= -32V, IE= 0 VEB= -5V, IC= 0 VCE= -5V, IC= -10mA VCE= -1V, IC= -500mA VCE= -1V, IC= -2A IC= -2A, IB = -0.
2A VCE= -1V, IC= -2A VCE= -1V, IC= -250mA http://www.
SeCoSGmbH.
com/ 26-Nov-2013 Rev.
A Any changes of specification will not be informed individually.
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