Enhance DataSheet

Bruckewell

A1SHB - P-Channel Enhancement Mode Power MOSFET

2445 Hits | ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability

Rectron

A19T - P-Channel Enhancement Mode Power MOSFET

266 Hits | VDS = -30V,ID = -4.2A RDS(ON) < 130mΩ @ VGS=-2.5V RDS(ON) < 75mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V High power and current handing capability Lead

Excelliance MOS

B09N03 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

111 Hits | pad of 2 oz copper. UNIT V A mJ W °C UNIT °C / W 2012/3/9 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL

Excelliance MOS

A06N03N - N-Channel Logic Level Enhancement Mode Field Effect Transistor

101 Hits | maximum junction temperature. 2Duty cycle  1％ 1.8 °C / W 75 2013/8/21 p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless O

Feihonltd

FHP740 - N-channel enhancement mode power MOS FET

92 Hits |

HOOYI

HY5608W - N-Channel Enhancement Mode MOSFET

88 Hits | • 80V/360A RDS(ON) = 1.5 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Ap

HOOYI

HY5012W - N-Channel Enhancement Mode MOSFET

68 Hits |

ROUM

20N60 - 20A 600V N-channel Enhancement Mode Power MOSFET

62 Hits | ● Fast Switching ● Low On Resistance(Rdson≤0.45Ω) ● Low Gate Charge(Typical:61nC) ● Low Reverse Transfer Capacitances(Typical:20pF) ● 100% Single Puls

NCE Power Semiconductor

NCE4688 - N & P-Channel Enhancement Mode Power MOSFET

56 Hits | ● N-Channel VDS = 60V,ID =6.3A RDS(ON) < 30mΩ @ VGS=10V N-channel P-channel Schematic diagram ● P-Channel VDS = -60V,ID = -6A RDS(ON) < 80mΩ @ VGS

APE

85T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

55 Hits | hermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Value 1.4 110 Units ℃/W ℃/W Data & specifications subject to change wit

Advanced Power Electronics

60T03GH - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

54 Hits | tal Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Paramet

HOOYI

HY3215 - N-Channel Enhancement Mode MOSFET

52 Hits |

NCE Power Semiconductor

NCE8290 - N-Channel Enhancement Mode Power MOSFET

50 Hits | ● VDS = 82V,ID =90A RDS(ON) < 8.5mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra

Alpha & Omega Semiconductors

AO4712 - N-Channel Enhancement Mode Field Effect Transistor

47 Hits | VDS (V) = 30V ID =11.2A (VGS = 10V) RDS(ON) < 14.5mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.5V) UIS TESTED! Rg,Ciss,Coss,Crss Tested D S S S G www.DataS

Silicon Standard

60T03H - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

44 Hits | ating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c T

HOOYI

HY3810B - N-Channel Enhancement Mode MOSFET

40 Hits |

SINO WEALTH

SH79F329 - Enhanced 8051 microprocessor

40 Hits |

Advanced Power Electronics

IRF840 - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

40 Hits | rage Temperature Range Operating Junction Temperature Range 320 8 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistan

SINO WEALTH

SH79F1619 - Enhanced 8051 Microcontroller

40 Hits |  8bits micro-controller with Pipe-line structured 8051 compatible instruction set  Flash ROM: 16K Bytes  RAM: internal 256 Bytes, external 256 Byt

HOOYI

HY1908PM - N-Channel Enhancement Mode MOSFET

38 Hits | • 80V/90A, RDS(ON)= 7.0mΩ (typ.) @ VGS=10V • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Descr

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