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Pan Jit International |
NPN GENERAL PURPOSE SWITCHING TRANSISTOR • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 200mA • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .087(2.2) .070(1.8) .054(1.35) .045(1 |
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SeCoS |
General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Epitaxial Planar Die Construction · Complementary PNP Type Available (MMBT3906W) · Ideal for Medium Power Amplification and Switching COLLECTOR 3 3 A L 3 Top View 12 BS VG |
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ON |
General Purpose Transistor • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.0 200 Unit Vdc Vdc Vdc mAdc http://onsemi.com COL |
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GME |
PNP General Purpose Transistor z Epitaxial planar die construction. z Complementary NPN type available Pb Lead-free (MMBT4401). z Also available in lead free version. z Ideal for medium power amplification and switching. z MSL 1 APPLICATIONS z Ideal for medium power amplific |
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UPM |
PNP GENERAL PURPOSE SWITCHING TRANSISTOR * PNP epitaxial silicon, planar design * Collector-emitter voltage VCE = -40V * Collector current IC = -200mA * Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above Mechanical Data Case: SOT-323, Plast |
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Fairchild |
PNP General Purpose Amplifier nded. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value |
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WEITRON |
General Purpose Transistor commended footprint. 2. Pulse Test:Pulse Width <= 300 µS, Duty Cycle <= 2.0%. V(BR)CEO -40 - Vdc V(BR)CBO -40 - Vdc V(BR)EBO -5.0 - Vdc IBL - -50 nAdc ICEX - -50 nAdc WEITRON http://www.weitron.com.tw MMBT3906W Electrical Characteri |
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SEMTECH |
PNP Silicon General Purpose Transistor ollector Emitter Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Base Emitter Saturation Voltage at -IC = 150 mA, -IB = 15 mA at -IC = 500 mA, -IB = 50 mA Collector Cutoff Current at -VCB = 35 V Base Cutoff Current at |
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Fairchild |
N-Channel General Purpose Amplifier |
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SeCoS |
General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free · Epitaxial Planar Die Construction · Complementary NPN Type Available (MMBT3904W) · Ideal for Medium Power Amplification and Switching "Lead free is available" A L COLLECTOR 3 |
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Pan Jit International |
PNP GENERAL PURPOSE SWITCHING TRANSISTOR • PNP epitaxial silicon, planar design • Collector-emitter voltage VCE = -40V • Collector current IC = -200mA • Lead free in compliance with EU RoHS 2011/65/EU directive • Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA • |
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Pan Jit International |
NPN GENERAL PURPOSE SWITCHING TRANSISTOR • NPN epitaxial silicon, planar design • Collector-emitter voltage VCE = 40V • Collector current IC = 600mA • In compliance with EU RoHS 2002/95/EC directives .119(3.00) .110(2.80) Unit: inch (mm) .007(.20)MIN .103(2.60) .086(2.20) .056(1.40) .04 |
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TAITRON |
SMD General Purpose Transistor • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted ot |
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TAITRON |
SMD General Purpose Transistor • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SOT-23 Maximum Ratings (T Am |
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CITC |
600mA General Purpose PNP Epitaxial Planar Transistor • Epitaxial plana chip construction. • Ideal for medium power application and switching. • As complementary type, the NPN transistor MMBT4401 is recommended. • Capable of 225mW power dissipation. • Suffix "G" indicates Halogen-free part, ex.MMBT4403G |
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GME |
NPN General Purpose Transistor Epitaxial planar die construction. Complementary NPN type available (MMBT5551). Also available in lead free version. Pb Lead-free MMBT5401 APPLICATIONS Ideal for medium power amplification and switching ORDERING INFORMATION Type No. Mar |
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SeCoS |
General Purpose NPN Silicon Transistor High Voltage Application Telephone Application Complementary to MMBTA92 MARKING 1D PACKAGE INFORMATION Package MPQ SOT-23 3K RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Leader Size 7 inch SOT-23 A L 3 Top Vie |
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SEMTECH |
NPN Silicon General Purpose Transistor |
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JR Electronics |
NPN Silicon General Purpose Transistor |
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ON Semiconductor |
PNP General-Purpose Amplifier |
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