DatasheetsPDF.com

MMBT3904LT1

ON
Part Number MMBT3904LT1
Manufacturer ON
Description General Purpose Transistor
Published May 9, 2005
Detailed Description MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available MAXIMUM ...
Datasheet PDF File MMBT3904LT1 PDF File

MMBT3904LT1
MMBT3904LT1

Overview
MMBT3904LT1 Preferred Device General Purpose Transistor NPN Silicon Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Symbol VCEO VCBO VEBO IC Value 40 60 6.
0 200 Unit Vdc Vdc Vdc mAdc http://onsemi.
com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance Junction−to−Ambient Junction and Storage Temperature Symbol PD Max 225 1.
8 RqJA PD 556 300 2.
4 RqJA TJ, Tstg 417 −55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C 1 2 SOT−23 (TO−236) CASE 318 Style 6 1AM = Specific Device Code 1AM 3 MARKING DIAGRAM 1.
FR−5 = 1.
0  0.
75  0.
062 in.
2.
Alumina = 0.
4  0.
3  0.
024 in.
99.
5% alumina.
ORDERING INFORMATION Device MMBT3904LT1 MMBT3904LT1G MMBT3904LT3 MMBT3904LT3G Package SOT−23 SOT−23 SOT−23 SOT−23 Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 10000 / Tape & Reel 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2004 1 February, 2004 − Rev.
5 Publication Order Number: MMBT3904LT1/D MMBT3904LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 1.
0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Base Cutoff Current (VCE = 30 Vdc, VEB = 3.
0 Vdc) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.
0 Vdc) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.
1 mAdc, VCE = 1.
0 Vdc) (IC = 1.
0 mAdc, VCE =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)