Intersil Corporation RFL datasheet

No.	Part #	Manufacturer	Description
1	RFL1N10	Intersil Corporation	1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs • 1A, 80V and 100V • rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- Ordering In
2	RFL2N06	Intersil Corporation	2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs • 2A, 50V and 60V • rDS(ON) = 0.95Ω • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mou
3	RFL1N08	Intersil Corporation	1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs • 1A, 80V and 100V • rDS(ON) = 1.200Ω [ /Title (RFL1N 08, RFL1N1 0) /Subject (1A, 80V and 100V, 1.200 Ohm, NChannel, Power MOSFETs) /Author () /Keywords (Harris Semiconductor, NChannel, Power MOSFETs, TO204AA) /Creator () /DOCIN FO pdf- Ordering In
4	RFL1N15	Intersil Corporation	1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs • 1A, 120V and 150V • rDS(ON) = 1.9Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mo
5	RFL1N18	Intersil Corporation	1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs • 1A, 180V and 200V • rDS(ON) = 3.65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface M
6	RFL1P08	Intersil Corporation	1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs • 1A, -80V and -100V • rDS(ON) = 3.65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER RFL1P08 RFL1P10 PACKAGE TO-20
7	RFL1P10	Intersil Corporation	1A/ -80V and -100V/ 3.65 Ohm/ P-Channel Power MOSFETs • 1A, -80V and -100V • rDS(ON) = 3.65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER RFL1P08 RFL1P10 PACKAGE TO-20
8	RFL1N10L	Intersil Corporation	1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET • 1A, 100V • rDS(ON) = 1.200Ω Ordering Information PART NUMBER RFL1N10L PACKAGE TO-205AF BRAND RFL1N10L NOTE: When ordering, use the entire part number. Symbol D G S Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices ar
9	RFL1N12	Intersil Corporation	1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs • 1A, 120V and 150V • rDS(ON) = 1.9Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mo
10	RFL1N12L	Intersil Corporation	1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs • 1A, 120V and 150V • rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) Ordering
11	RFL1N15L	Intersil Corporation	1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs • 1A, 120V and 150V • rDS(ON) = 1.900Ω [ /Title (RFL1N 12L, RFL1N1 5L) /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) Ordering
12	RFL1N20	Intersil Corporation	1A/ 180V and 200V/ 3.65 Ohm/ N-Channel Power MOSFETs • 1A, 180V and 200V • rDS(ON) = 3.65Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface M
13	RFL2N05	Intersil Corporation	2A/ 50V and 60V/ 0.95 Ohm/ N-Channel Power MOSFETs • 2A, 50V and 60V • rDS(ON) = 0.95Ω • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Related Literature - TB334 “Guidelines for Soldering Surface Mou
14	RFL2N06L	Intersil Corporation	2A/ 60V/ 0.950 Ohm/ Logic Level/ N-Channel Power MOSFET • 2A, 50V and 60V • rDS(ON) = 0.950Ω • Design Optimized for 5V Gate Drives • Can be Driven from QMOS, NMOS, TTL Circuits • Compatible with Automotive Drive Requirements • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfe
15	RFL4N12	Intersil Corporation	4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs • 4A, 120V and 150V • rDS(ON) = 0.400Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device [ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150V, 0.4
16	RFL4N15	Intersil Corporation	4A/ 120V and 150V/ 0.400 Ohm/ N-Channel Power MOSFETs • 4A, 120V and 150V • rDS(ON) = 0.400Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device [ /Title (RFL4N 12, RFL4N1 5) /Subject (4A, 120V and 150V, 0.4