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RFL1N12

Part Number	RFL1N12
Manufacturer	Intersil Corporation
Description	1A/ 120V and 150V/ 1.9 Ohm/ N-Channel Power MOSFETs
Published	Apr 16, 2005
Detailed Description	Semiconductor RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs Description These are N-Channel enha...
Datasheet	RFL1N12 PDF File

Overview

Semiconductor RFL1N12, RFL1N15 1A, 120V and 150V, 1.
9 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA09196.
January 1998 Features • 1A, 120V and 150V • rDS(ON) = 1.
9Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device • Re...

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