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RFL1N10L

Part Number	RFL1N10L
Manufacturer	Intersil Corporation
Description	1A/ 100V/ 1.200 Ohm/ Logic Level/ N-Channel Power MOSFET
Published	Apr 16, 2005
Detailed Description	RFL1N10L September 1998 1A, 100V, 1.200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhan...
Datasheet	RFL1N10L PDF File

Overview

RFL1N10L September 1998 1A, 100V, 1.
200 Ohm, Logic Level, N-Channel Power MOSFET Description This is an N-Channel enhancement mode silicon gate power ﬁeld effect transistor speciﬁcally designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers.
This performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Formerly developmental type TA09524.
Features • 1A, 100V • rDS(ON) = 1.
200Ω Ordering Information PART NUMBER RFL1N10L PACKAGE T...

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