1SS387

1SS380 : 1SS380 Switching Diode (Low leakage) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 40 V IFM 225 mA Io 100 mA IFSM 400 mA ●Features High reliability Small mold type Low IR ●Inner Circuit Data sheet 　　　 　 　 　 　 　 　 　 　 　　　 NotNeRewcDoemsimgennsded for ●Application General switching ●Structure Epitaxial planar ●Absolute Maximum Ratings (Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Average rectified forward current Io Forward current IFM Peak forward surge current IFSM Junction temperature Tj Storage temperature Tstg ●Characteristics (Ta = 25ºC) Parameter Symbol Forward voltage VF Reverse current IR Capacitance.

1SS380 : Silicon Epitaxial Planar Diode FEATURES  Small surface mounting type  High speed  Suitable for high packing density Pb Lead-free Production specification 1SS380 APPLICATIONS  High speed switching ORDERING INFORMATION Type No. Marking 1SS380 6D SOD-323 Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage VRM 40 DC Reverse Voltage VR 35 Peak forward Current IFSM 225 Average Rectified Output Current IO 100 Surge current(1s) Isurge 400 Power Dissipation PD 200 Junction temperature Tj 125 Storage temperature TSTG -55 to+125 Unit V V mA mA mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless oth.

1SS380 : ® WON-TOP ELECTRONICS 1SS380 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Silicon Epitaxial Planar Die Construction  Fast Switching Speed  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 C A B Mechanical Data  Case: SOD-323, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.004 grams (approx.)  Marking: 6D  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 E J D H G SOD-323 Dim Min Max A 2.30 2.75 B 1.60 1.80 C 1.20 1.40 D 0.25 0.40 E 0.05 0.15 G 0..

1SS380 : SMD Type SWITCHING DIODE 1SS380 Diodes Features Ultra small mold type. (UMD2) High reliability. SOD-323 1.7+0.1 -0.1 Unit: mm 0.85+0.05 -0.05 +0.050.3 -0.05 +0.11.3 -0.1 2.6+0.1 -0.1 0.475 0.375 1.0max +0.050.1 -0.02 Absolute Maximum Ratings Ta = 25 Paremeter Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current Average rectified forward current Surge current t=1s Junction Temperature Storage Temperature Range Symbol VRM VR IFM Io Isurge Tj Tstg Limits 40 35 225 100 400 150 -55 to+ 150 Unit V V mA mA mA Electrical Characteristics Ta = 25 Parameter Forward Volatge Reverse Current Capacitance between terminals Note: 1.Pulse test: tp = 300 s; ä = 0.02. Symbol .

1SS380 : 1SS380 Silicon Epitaxial Planar Diodes SOD-323 Features — Small surface mounting type. — High speed. — Suitable for high packing density. Applications — High speed switching. Dimensions in inches and (millimeters) Ordering Information Type No. 1SS380 Marking 6D Package Code SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Peak reverse voltage VRM 40 DC Reverse Voltage VR 35 Peak forward Current IFSM 225 Average Rectified Output Current IO 100 Power Dissipation PD 200 Junction temperature Tj 125 Storage temperature TSTG -55~+125 Unit V V mA mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Forward.

1SS380TF : Switching Diode 1SS380TF Applications High speed switching Dimensions (Unit : mm) 1.25±0.1 0.1±0.1 　　　 0.05 AEC-Q101 Qualified Land size figure (Unit : mm) 0.9MIN. 1.7±0.1 2.5±0.2 0.8MIN. 2.1 Features 1)Ultra small mold type. (UMD2) 2)High reliability Construction Silicon epitaxial planar UMD2 0.3±0.05 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC-90/A dot (year week factory) 0.7±0.2 　　　 0.1 Structure Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3±0.1 3.5±0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 Absolute maximum ratings (Ta=25C) Parameter Symbol Reverse voltage (repetitive peak) Reverse voltage (DC) Forward current Average rectified forward current VRM VR IFM.

1SS380VM : 1SS380VM Switching Diode (Low leakage) 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VRM 80 V IFM 225 mA Io 100 mA IFSM 400 mA ●Features High reliability Small mold type Low IR ●Inner Circuit Data sheet 　　　 　 　 　 　 　 　 　 　 　　　 ●Application General switching ●Structure Epitaxial planar ●Absolute Maximum Ratings (Ta = 25ºC) Parameter Symbol Reverse voltage VR Repetitive peak reverse voltage VRM Average rectified forward current Io Forward current IFM Peak forward surge current IFSM Junction temperature Tj Storage temperature Tstg ●Characteristics (Ta = 25ºC) Parameter Symbol Forward voltage VF Reverse current IR Capacitance between termi.

1SS381 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS381 1SS381 VHF Tuner Band Switch Applications • Small package • Small total capacitance: CT = 1.2 pF (max) • Low series resistance: rs = 0.6 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Forward current Junction temperature Storage temperature range VR 30 V IF 100 mA Tj 125 °C Tstg −55 to 125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/vo.

1SS382 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS382 Ultra High Speed Switching Application  Small package  Composed of 2 independent diodes.  Low forward voltage : VF (3) = 0.92 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.) 1SS382 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 300 * mA Average forward current IO 100 * mA Surge current (10ms) IFSM 2* A Power dissipation PD (Note 1, 3) 125 mW PD (Note 2, 3) 100 Junction temperature Tj (Note 1) 150 °C Tj (Note 2) 125 Storage temperature Tstg (Note 1) −55.

1SS383 : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 1SS383 Low Voltage High Speed Switching  Small package  Composed of 2 independent diodes.  Low forward voltage: VF (3) = 0.54V (typ.)  Low reverse current: IR = 5μA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 45 40 300 * 100 * 1* 100 * V V mA mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC ― Operating temperature range Topr −40 to 100 °C JEITA TOSHIBA ― 1-2U1A.

1SS384 : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS384 Low Voltage High Speed Switching z Small package z Composed of 2 independent diodes. z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA 1SS384 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 15 10 200 * 100 * 1* 100 * V V mA mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the a.

1SS385 : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching 1SS385 Unit: mm z Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA z Small package Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 15 10 200 * 100 * 1* 100 V V mA mA A mW Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage an.

1SS385F : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385F High Speed Switching 1SS385F Unit in mm Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Ultra-small package Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Maximum (peak) reverse Voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation Junction temperature Storage temperature range Operating temperature range VRM VR IFM IO IFSM P Tj Tstg Topr 15 10 200 (*) 100 (*) 1 (*) 100 125 −55∼125 −40∼100 *: Unit rating. Total rating = unit rating × 1.5 Electrical Characteristics (Ta = 25°C) Unit V V mA mA A mW °C °C °C JEDEC EIAJ TOSHIBA ― ― ― Characteristic.

1SS385FV : TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385FV 1SS385FV High-Speed Switching Applications z Low forward voltage: VF = 0.23 V (typ.) @IF = 5 mA z Ultra-small package Absolute Maximum Ratings (Ta = 25°C) 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 23 0.32±0.05 1.2±0.05 0.8±0.05 0.4 0.4 Characteristic Symbol Rating Unit 0.13±0.05 Maximum (peak) reverse voltage VRM 15 V 0.5±0.05 Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 * mA Average forward current Surge current (10 ms) Power dissipation Junction temperature IO IFSM P Tj 100 * 1* 150** 125 mA A mW °C VESM 1. ANODE 1 2. ANODE 2 3. CATHODE Storage temperature range Tstg −55 to 125 °C .

1SS387 : TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications  AEC-Q101 Qualified (Note1)  Compact 2-pin package – ideal for high-density mounting  Low forward voltage : VF (3) = 0.98 V (typ.)  Fast reverse recovery time : trr = 1.6 ns (typ.)  Small total capacitance : CT = 0.5 pF (typ.) Note1: For detail information, please contact our sales. 1SS387 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA Surge current (10ms) IFSM 1 A Power dissipation PD (Note 2.

1SS387 : ® WON-TOP ELECTRONICS 1SS387 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Silicon Epitaxial Planar Die Construction  Fast Switching Speed  Surface Mount Package Ideally Suited for Automatic Insertion  For General Purpose Switching Applications  Plastic Material – UL Recognition Flammability Classification 94V-0 C Mechanical Data  Case: SOD-523, Molded Plastic  Terminals: Plated Leads Solderable per MIL-STD-202, Method 208  Polarity: Cathode Band  Weight: 0.002 grams (approx.)  Marking: G  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 4 E A B L D G SOD-523 Dim Min A 1.50 Max 1.70 B 1.10 1.30 C 0.70 0.90 D 0.30 Typical E 0.10 Typi.

1SS387 : MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS387 Features • High speed switching diode • Surface mount package • For general purpose switching applications • Marking: G • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Mechanical Data • Case: SOD-523, Molded Plastic • Terminals: Solderable per MIL-STD-202, Method 208 • Polarity: Indicated by Cathode Band • Lead Free Finish/RoHS Compliant("P" Suffix designates RoHS Compliant. See ordering information) Maximum Ratings @ 25°C Unless Otherwise Specified CHARACTERISTICS Maximum Reverse Voltage Reverse Voltage.