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1SS387

Toshiba Semiconductor
Part Number 1SS387
Manufacturer Toshiba Semiconductor
Description Diode
Published Mar 23, 2005
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications 1SS387 Unit: mm z Compact 2...
Datasheet PDF File 1SS387 PDF File

1SS387
1SS387

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS387 Ultra High Speed Switching Applications 1SS387 Unit: mm z Compact 2-pin package – ideal for high-density mounting z Low forward voltage : VF (3) = 0.
98V (typ.
) z Fast reverse recovery time : trr = 1.
6ns (typ.
) z Small total capacitance : CT = 0.
5pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 85 80 200 100 1 150 * V V mA mA A mW Junction temperature Storage temperature Tj 125 °C JEDEC Tstg −55∼125 °C JEITA ― ― Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA 1-1G1A Weight: 1.
4mg (typ) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperatur...


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