BUZ67

BUZ60 : BUZ 51 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 51 VDS 1000 V ID 3.4 A RDS(on) 4Ω Package TO-220 AB Ordering Code C67078-S1344-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 3.4 Unit A ID IDpuls 13.5 TC = 29 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 3.4 12 mJ ID = 3.4 A, VDD = 50 V, RGS = 25 Ω L = 67 mH, Tj = 25 °C Gate source voltage Power dissipation 410 VGS Ptot ± 20 125 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Thermal resi.

BUZ60 : .

BUZ60 : .

BUZ60 : BUZ60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ60 Voss 400 V Ros(on) 1.00 10 5.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps. , TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10M Ptot Tstg Tj Drain-source voltage (.

BUZ60 : isc N-Channel Mosfet Transistor BUZ60 ·FEATURES ·5.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=35℃ 5.5 A .

BUZ60B : BUZ60 Semiconductor Data Sheet October 1998 File Number 2260.1 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 5.5A, 400V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 1.000Ω (BUZ60 field effect transistor designed for applications such as • SOA is Power Dissipation Limited ) switching regulators, switching converters, motor drivers, /Sub• Nanosecond Switching Speeds relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ject • Linear Transfer Characteristics (5.5A, This type can be operated directly from integrated circuits. • High Input Impedance 400V, Formerly developmental type T.

BUZ60B : .

BUZ60B : BUZ60B N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ60B Voss 400 V Ros(on) 1.5 n 10 4.5 A • HIGH VOLTAGE - FOR OFF-LINE APPLICATIONS • ULTRA FAST SWITCHING • EASY DRIVE - FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps. TO-220 INTERNAL SCHEMATIC DIAGRAM 5 ABSOLUTE MAXIMUM RATINGS Vos VOGR VGS 10 10M Ptot Tstg Tj Drai n-source volt.

BUZ60B : isc N-Channel Mosfet Transistor BUZ60B ·FEATURES ·4.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=35℃ 4.5 A.

BUZ61 : BUZ 61 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 61 VDS 400 V ID 12.5 A RDS(on) 0.4 Ω Package TO-220 AB Ordering Code C67078-S1341-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 12.5 Unit A ID IDpuls 50 TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12.5 13 mJ ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Therma.

BUZ61 : BUZ 61 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 12.5 A RDS(on) 0.4 Ω Package Ordering Code BUZ 61 TO-220 AB C67078-S1341-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID A 12.5 Pulsed drain current TC = 25 °C IDpuls 50 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C 12.5 13 mJ 570 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 150 V W Operating temperature Storage temperature Thermal resistance, chi.

BUZ61A : BUZ 61 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 61 A VDS 400 V ID 11 A RDS(on) 0.5 Ω Package TO-220 AB Ordering Code C67078-S1341-A3 Maximum Ratings Parameter Continuous drain current Symbol Values 11 Unit A ID IDpuls 44 TC = 27 °C Pulsed drain current TC = 25 °C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 12.5 13 mJ ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C Gate source voltage Power dissipation 570 VGS Ptot ± 20 150 V W TC = 25 °C Operating temperature Storage temperature Thermal resistance, chip case Therma.

BUZ61A : BUZ 61 A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS 400 V ID 11 A RDS(on) 0.5 Ω Package Ordering Code BUZ 61 A TO-220 AB C67078-S1341-A3 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 27 °C ID A 11 Pulsed drain current TC = 25 °C IDpuls 44 IAR E AR E AS Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse ID = 12.5 A, VDD = 50 V, RGS = 25 Ω L = 6.38 mH, Tj = 25 °C 12.5 13 mJ 570 V GS P tot Gate source voltage Power dissipation TC = 25 °C ± 20 150 V W Operating temperature Storage temperature Thermal resistance, chi.

BUZ63 : .

BUZ63 : isc N-Channel Mosfet Transistor BUZ63 ·FEATURES ·5.9A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 5.9 A .

BUZ64 : isc N-Channel Mosfet Transistor ·FEATURES ·11.5A, 400V ·SOA is Power Dissipation Limited ·Nanosecond Switching Speeds ·Linear Transfer Characteristics ·High Input Impedance ·Majority Carrier Device ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION Designed for applications such as switching regulators, switching converters, motor drivers,relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=37℃ 11.5 A Pto.