BYV12

BYV10 : The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. MIN. MAX. 20 30 40 1 +150 125 V V V A UNIT °C °C 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 0.1 A IF = 1 A IF = 3 A IR Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD81 standard mounting condi.

BYV10-20 : The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. MIN. MAX. 20 30 40 1 +150 125 V V V A UNIT °C °C 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 0.1 A IF = 1 A IF = 3 A IR Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD81 standard mounting condi.

BYV10-30 : The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. MIN. MAX. 20 30 40 1 +150 125 V V V A UNIT °C °C 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 0.1 A IF = 1 A IF = 3 A IR Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD81 standard mounting condi.

BYV10-40 : Metal to silicon rectifier diodes in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. DO 41 (Glass) ABSOLUTE RATINGS (limiting values) Symbol IF(AV) IFSM Average Forward Current* Surge non Repetitive Forward Current Parameter Tamb = 60 °C Tamb = 25°C tp = 10ms Tamb = 25°C tp = 300µs Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Parameter Repetitive Peak Reverse Voltage Value 1 25 Sinusoidal Pulse 50 Rectangular Pulse - 65 to + 150 - 65 to + 125 230 °C °C °C Unit A A Symbol VRRM BYV 10-40 40 .

BYV10-40 : The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. MIN. MAX. 20 30 40 1 +150 125 V V V A UNIT °C °C 1996 May 13 2 Philips Semiconductors Product specification Schottky barrier diodes ELECTRICAL CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. SYMBOL VF PARAMETER forward voltage IF = 0.1 A IF = 1 A IF = 3 A IR Cd Note 1. Pulsed test: tp = 300 µs; δ = 0.02. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Refer to SOD81 standard mounting condi.

BYV10-60 : Metal to silicon rectifier diode in glass case featuring very low forward voltage drop and fast recovery time, intended for low voltage switching mode power supply, polarity protection and high frequency circuits. DO 41 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(AV) IFSM Parameter Repetitive Peak Reverse Voltage Average Forward Current* Surge non Repetitive Forward Current Tamb = 25 °C Tamb = 25°C tp = 10ms Tamb = 25°C tp = 300µs Tstg Tj TL Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Value 60 1 20 Sinusoidal Pulse 40 Rectangular Pulse - 65 to + 150 - 65 to + 125 230 °C °C °C Unit V A A THERMAL RESISTANCE Symbol R.

BYV10-600P : Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • Fast switching • Low leakage current • Low forward voltage drop • Low thermal resistance • Soft recovery characteristic 3. Applications • High frequency switched-mode power supplies • Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 109 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage IF = 10 A; Tj = 150 °C; Fig. 6 Dynamic characteristics trr reverse recovery time I.

BYV10-600P : Ultrafast power diode in a SOD59 (2-lead TO-220AC) plastic package. 2. Features and benefits • Fast switching • Low leakage current • Low forward voltage drop • Low thermal resistance • Soft recovery characteristic 3. Applications • High frequency switched-mode power supplies • Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VR reverse voltage IF(AV) average forward current IFSM non-repetitive peak forward current Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Conditions DC δ = 0.5 ; Tmb ≤ 109 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 tp = 10 ms; .

BYV10D-600P : Ultrafast power diode in TO252 (DPAK) plastic package. 2. Features and benefits • Low forward voltage drop • Low leakage current • Soft reverse recovery characteristics • High thermal cycling performance 3. Applications • Home appliance power supply • Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VRRM repetitive peak reverse voltage IF(AV) average forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Symbol Parameter Static characteristics VF forward voltage Dynamic characteristics trr reverse recovery time Conditions δ .

BYV10ED-600P : Enhanced ultrafast power diode in a SOT428 (DPAK) plastic package. 2. Features and benefits • High thermal cycling performance • Soft recovery characteristic • Low on-state losses • Surface-mountable package • Low thermal resistance • Enhanced avalanche energy capability 3. Applications • Dual Mode (DCM and CCM) PFC • Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Tmb ≤ 118 °C; Square-wave pulse; Fig. 1; Fig. 2; Fig. 3 IFRM repetitive peak forward δ = 0.5 ; tp = 25 µs; Tmb ≤ 118 °C; current Square-wave pulse IF.

BYV10EX-600P : Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits • Fast switching • Isolated plastic package • Low leakage current • Low forward voltage drop • Low thermal resistance • Soft recovery characteristic • Enhanced avalanche energy capability 3. Applications • • High frequency switched-mode power supplies Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating Conditions VRRM IF(AV) IFRM IFSM repetitive peak reverse voltage average forward current repetitive peak forward current non-repetitive peak forward current δ = 0.5 ; square-wave pulse; T.

BYV10X-600P : Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits • Fast switching • Isolated plastic package • Low leakage current • Low forward voltage drop • Low thermal resistance • Soft recovery characteristic 3. Applications • High frequency switched-mode power supplies • Discontinuous Current Mode (DCM) Power Factor Correction (PFC) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VRRM repetitive peak reverse voltage IF(AV) average forward current δ = 0.5 ; Th ≤ 71 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3 Static characteristics VF forward voltage IF = 10 A; Tj = 150 °C; Fig. 6 Dynamic characteristics tr.

BYV1100 : Cavity free cylindrical glass package through Implotec™(1) technology. This package is hermetically sealed k a MAM123 Fig.1 Simplified outline (SOD81) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF(AV) PARAMETER repetitive peak reverse voltage continuous reverse voltage average forward current Ttp = 55 °C; lead length = 10 mm; averaged over any 20 ms period; see Figs.2 and 4 Tamb = 60 °C; printed-circuit board mounting, see Fig.12; averaged over any 20 ms period; see Figs.3 and 4 IFRM IFSM repetitive peak forward current non-repetitive peak forward current Ttp = 55 °C; see Fig.6 Tamb = 60 °C; see Fig.7 t = 10 ms half sine wa.

BYV116 : Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118BYV116BVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (b.

BYV116-20 : Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118BYV116BVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (b.

BYV116-25 : Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118BYV116BVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (b.

BYV116B : Dual schottky rectifier diodes intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The BYV116 series is supplied in the SOT78 (TO220AB) conventional leaded package. The BYV116B series is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab DESCRIPTION anode 1 (a) cathode (k) 1 anode 2 (a) cathode (k) SOT78 (TO220AB) tab SOT404 tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS BYV118BYV116BVRRM VRWM VR IO(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current (b.