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BYV10

NXP
Part Number BYV10
Manufacturer NXP
Description Schottky barrier diodes
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes...
Datasheet PDF File BYV10 PDF File

BYV10
BYV10

Overview
DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 BYV10 series Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 13 Philips Semiconductors Product specification Schottky barrier diodes FEATURES • Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package.
APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM BYV10-20 BYV10-30 BYV10-40 IF(AV) Tstg Tj Note 1.
Refer to SOD81 standard mounting conditions.
average forward current storage temperature junction temperature note 1 PARAMETER repetitive peak reverse voltage − − − − −65 − CONDITIONS handbook, 4 columns BYV10 series DESCRIPTION The BYV10-20 to BYV10-40 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.
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