PE6004

PE6003 : The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) 105mΩ @ VGS=10V RDS(ON) 125mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●Battery Switch ●DC/DC Converter SOT-23 -3L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain.

PE6005 : The PE6005 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =5A RDS(ON) 45mΩ @ VGS=10V （Typ：38mΩ） Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PE6005 D G S Schematic diagram SOT-223-3L view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM.

PE600BA : PE600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ @VGS = 10V ID 32A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current3 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C TA = 25 °C TA= 70 °C ID IDM 32 20 14 11 90 Avalanche Current IAS 18.5 Avalanche Energy L =0.1mH EAS 17 Power Dissipation Power Dissipation4 TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C PD 17.8 7 3.5 2.3 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RE.

PE600SA : PE600SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 30 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 19 11 Pulsed Drain Current1 TA= 70 °C IDM 9.3 80 Avalanche Current IAS 21 Avalanche Energy L =0.1mH EAS 22 TC = 25 °C 20 Power Dissipation4 TC = 100 °C TA = 25 °C PD 8.3 3.1 TA = 70 °C 2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE .