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PE600SA

UNIKC
Part Number PE600SA
Manufacturer UNIKC
Description MOSFET
Published Feb 4, 2017
Detailed Description PE600SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 25A PDFN 3X3P A...
Datasheet PDF File PE600SA PDF File

PE600SA
PE600SA

Overview
PE600SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 12mΩ @VGS = 10V ID 25A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 30 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 19 11 Pulsed Drain Current1 TA= 70 °C IDM 9.
3 80 Avalanche Current IAS 21 Avalanche Energy L =0.
1mH EAS 22 TC = 25 °C 20 Power Dissipation4 TC = 100 °C TA = 25 °C PD 8.
3 3.
1 TA = 70 °C 2 Operating Junction & Storage Temperature Range TJ, Tstg -55 to 150 UNITS V V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t≦10s Steady-State RqJA RqJA 40 69 Junction-to-Case Steady-State RqJC 6 1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, in a still air...


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