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PE6003

Part Number	PE6003
Manufacturer	semi one
Description	N-Channel Enhancement Mode Power MOSFET
Published	Dec 3, 2018
Detailed Description	PE6003 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6003 uses advanced trench technology to provide excel...
Datasheet	PE6003 PDF File

Overview

PE6003 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE6003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a Battery protection or in other Switching application.
GENERAL FEATURES ● VDS =60V,ID =3A RDS(ON) <105mΩ @ VGS=10V RDS(ON) < 125mΩ @ VGS=4.
5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D G S Schematic diagram Marking and pin Assignment Application ●Battery Switch ●DC/DC Converter SOT-23 -3L top view Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA Limit 60 ±20 3 10 1.
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