| Part Number | DU2860U |
| Manufacturer | Tyco Electronics |
| Title | RF MOSFET Power Transistor/ 6OW/ 28V 2 - 175 MHz |
| Description | s2zz-f rgy== e -A5g =r- ---=- an AMP company RF MOSFET 2 - 175 MHz Features Power Transistor, 6OW, 28V DU2860U v2.00 A 4Gl. N-Channel Enha... |
| Features |
Power Transistor,
6OW, 28V
DU2860U
v2.00
A
4Gl.
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices
. .
Absolute Maximum Ratings at 25°C
Electrical Characteristics at 25°C
IWA-COM, In...
|
| File Size | 203.16KB |
| Datasheet |
|
DU2860 : * an AMP company =zs.--E-= -=---- .-----= - E RF MOSFET 2 - 175 MHz Features Power Transistor, 6OW, 28V DU2860T v2.00 -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications Subjectto North America: CISS Coss CRSS GP % VSWR-T Change WAhout Notice. 135 120 24 13 - pF pF pF dB % - V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, I,,=300 mA, P,,=60.0 V,,=28.0 V, I,,=300 mA, P,,=60.0 W, .
DU2860T : * an AMP company =zs.--E-= -=---- .-----= - E RF MOSFET 2 - 175 MHz Features Power Transistor, 6OW, 28V DU2860T v2.00 -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices . . Absolute Maximum Ratings at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications Subjectto North America: CISS Coss CRSS GP % VSWR-T Change WAhout Notice. 135 120 24 13 - pF pF pF dB % - V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, F=l .OMHz V,,=28.0 V, I,,=300 mA, P,,=60.0 V,,=28.0 V, I,,=300 mA, P,,=60.0 W, .
DU2860T : DU2860T RF Power MOSFET Transistor 60 W, 2 - 175 MHz, 28 V Features N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature VDS VGS IDS PD TJ 65 20 12 159 200 Storage Temperature Thermal Resistance TSTG θJC -65 to +150 1.1 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 9.0 - j4.0 ZLOAD (Ω) 6.0 +j0.0 50 10.0 - j6.5 5.0 + j2.0 100 6.0 - j5.5 4.0 + j3.0 200 1.1 - j.