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DU2860T

Part Number	DU2860T
Manufacturer	MA-COM
Description	RF Power MOSFET Transistor
Published	Aug 21, 2017
Detailed Description	DU2860T RF Power MOSFET Transistor 60 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structur...
Datasheet	DU2860T PDF File

Overview

DU2860T RF Power MOSFET Transistor 60 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature VDS VGS IDS PD TJ 65 20 12 159 200 Storage Temperature Thermal Resistance TSTG θJC -65 to +150 1.
1 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) 30 ZIN (Ω) 9.
0 - j4.
0 ZLOAD (Ω) 6.
0 +j0.
0 50 10.
0 - j6.
5 5.
0 + j2.
0 100 6.
0 - j5.
5 4.
0 + j3.
0 200 1.
1 - j3.
0 2.
0 + j1.
9 VDD = 28V, IDQ = 300mA, POUT = 60 W ZIN is the series equivalent input impedance of the device from gate to source.
ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.
Package Outline Rev.
V1 LETTER DIM A B C D E F G H J K ...

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