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DU2860T

Tyco Electronics
Part Number DU2860T
Manufacturer Tyco Electronics
Description RF MOSFET Power Transistor/ 6OW/ 28V 2 - 175 MHz
Published Apr 3, 2005
Detailed Description * an AMP company =zs.--E-= -=---- .-----= - E RF MOSFET 2 - 175 MHz Features Power Transistor, 6OW, 28V DU2860T v...
Datasheet PDF File DU2860T PDF File

DU2860T
DU2860T

Overview
* an AMP company =zs.
--E-= -=---- .
-----= - E RF MOSFET 2 - 175 MHz Features Power Transistor, 6OW, 28V DU2860T v2.
00 -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices .
.
Absolute Maximum Ratings at 25°C Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance Specifications Subjectto North America: CISS Coss CRSS GP % VSWR-T Change WAhout Notice.
135 120 24 13 - pF pF pF dB % - V,,=28.
0 V, F=l .
OMHz V,,=28.
0 V, F=l .
OMHz V,,=28.
0 V, F=l .
OMHz V,,=28.
0 V, I,,=300 mA, P,,=60.
0 V,,=28.
0 V, I,,=300 mA, P,,=60.
0 W, F=l75 MHz W, F=175 MHz 60 - 3O:l V,,=28.
0 V, I,,=300 mA, P,#GO.
O W, F=l75 MHz M/A-COM, Tel.
(800) 3662266 Fax (800) 618-8883 n Inc.
Asia/Pacific: Tel.
+81 (03) 3226-1671 Fax +81 (03) 3226-1451 n Europe: Tel.
+44 (1344) 869 595 Fax +44 (1344) 300 020 RF MOSFET Power Transistor, 6OW, 28V DU2860T v2.
00 Typical Broadband Performance Curves GAIN vs FREQUENCY 25 I’,,=28 V I,,=300 mA PO,=60 W ao- EFFICIENCY V,,=28 vs FREQUENCY mA PO”,.
=60 W V I,,=300 10 - 50 100 150 200 2.
5 50 100 1.
50 200 FREQUENCY (MHz) FREQUENCY (MHz) POWER OUTPUT 801 V,,=20 vs POWER INPUT mA 1 V I,,=300 0 0.
5 1 1.
5 2 2.
5 2.
75 3 POWER INPUT(W) Specifications Subject to Change Wiiout Notice.
MIA-COM, Inc.
Tel.
(800) Fax (800) 366-2266 618-8883 m Asia/Pacific: Tel.
Fax +81 +81 (03) 3226-1671 (03) 3226-1451 u Europe: Tel.
Fax +44 (1344) +44 (1344) 869 595 300 020 North America: RF MOSFET Power Transistor, 6OW, 28V Typical Device impedance Frequency 30 50 100 200 (MHz) Z,, (OHMS) 9.
0 - j 4.
0 6.
0 - j 5.
8 4.
0 - j 4.
2 1.
0-j V,,=28 1.
0 Z LoAD (OHMS) 6.
0 + j 0.
0 5.
0 + j 2.
0 4.
0 + j 3.
0 2.
0 + j 1.
9 mA, P,,,=60 Watts V, I,,=300 Z,, is the series equivalent Z LOAD is thebptimum input impedance of the device from gate to source.
as measured from drain to ground.
serie...


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