| Part Number | SMBT3904S |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon Switching Transistors |
| Description | NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvan... |
| Features |
lation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)
Unit V
mA mV
°C
Unit K/W
1 2012-08-21
SMBT3904...MMBT3904
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter ...
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| File Size | 862.31KB |
| Datasheet |
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SMBT3904 : NPN Silicon Switching Transistor High DC current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: SMBT 3906 (PNP) q SMBT 3904 Type SMBT 3904 Marking s1A Ordering Code (tape and reel) Q68000-A4416 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 69 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values 40 60 6 200 330 150 – 65 + 150 Unit V mA mW ˚C 315 245 K/W 1) 2) For detai.
SMBT3904 : NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906... MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 SMBT3904...MMBT3904 Type SMBT3904/MMBT3904 SMBT3904S Marking Pin Configuration Package s1A 1=B 2=E 3=C - - - SOT23 s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 71°.
SMBT3904DW1 : MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose Transistors The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popular SOT−23/SOT−323 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−363 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7−inch/3,000 Unit Tape and Reel • S and NSV Prefix for Automotive and Other Applications Requiring .
SMBT3904PN : SMBT3904PN NPN/PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP 4 5 6 Transistors in one package 2 Tape loading orientation Top View 6 5 4 W1s 1 2 3 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side EHA07193 3 1 VPS05604 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07177 Type SMBT3904PN Maximum Ratings Parameter Marking s3P Pin Configuration Package 1 = E 2 = B 3 = C 4 = E 5 = B 6 = C SOT363 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 5 200 250 150 -65 ... 150 mA mW °C Unit V Collec.
SMBT3904S : SMBT 3904S NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP) 4 5 6 2 1 3 VPS05604 Type SMBT 3904S Marking Ordering Code s1A Q62702-A1201 Pin Configuration Package 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction - soldering point Symbol Value 40 60 6 200 250 150 - 6.
SMBT3904U : SMBT3904U NPN Silicon Switching Transistor Array High DC current gain: 0.1mA to 100mA Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors 5 6 4 with good matching in one package Complementary type: SMBT3906U (PNP) C1 6 B2 5 E2 4 3 2 1 VPW09197 TR2 TR1 1 E1 2 B1 3 C2 EHA07178 Type SMBT3904U Maximum Ratings Parameter Marking s1A Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 60 6 200 330 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, TS = 105 °C Junction temperature Storage temperatur.
SMBT3904UPN : SMBT3904UPN NPN/PNP Silicon Switching Transistor Array High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP 5 6 4 Transistors in one package 3 2 1 VPW09197 Tape loading orientation Top View 6 5 4 W1s 1 2 3 Direction of Unreeling Position in tape: pin 1 opposite of feed hole side SC74_Tape Marking on SC74 package (for example W1s) corresponds to pin 1 of device C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07177 Type SMBT3904UPN Maximum Ratings Parameter Marking s3P Pin Configuration Package 1 = E 2 = B 3 = C 4 = E 5 = B 6 = C SC74 Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Value 40 40 5 200 330 150 -65 ... 150 mA mW °C Unit V Collec.