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SMBT3904

Infineon Technologies AG
Part Number SMBT3904
Manufacturer Infineon Technologies AG
Description NPN Silicon Switching Transistor
Published Apr 7, 2005
Detailed Description NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • ...
Datasheet PDF File SMBT3904 PDF File

SMBT3904
SMBT3904

Overview
NPN Silicon Switching Transistors • High DC current gain: 0.
1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic) internal isolated transistors with good matching in one package • Complementary types: SMBT3906.
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MMBT3906 • SMBT3904S: For orientation in reel see package information below • Pb-free (RoHS compliant) package • Qualified according AEC Q101 SMBT3904.
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MMBT3904 Type SMBT3904/MMBT3904 SMBT3904S Marking Pin Configuration Package s1A 1=B 2=E 3=C - - - SOT23 s1A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipationTS ≤ 71°C, SOT23, SMBT3904 TS ≤ 115°C, SOT363, SMBT3904S Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) SMBT3904/MMBT3904 SMBT3904S Symbol VCEO VCBO VEBO IC Ptot Tj Tstg Symbol RthJS Value 40 60 6 200 330 250 150 -65 .
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150 Value ≤ 240 ≤ 140 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mV °C Unit K/W 1 2012-08-21 SMBT3904.
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MMBT3904 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 40 - - IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 60 - - IC = 10 µA, IE = 0 Emitter-base breakdown voltage V(BR)EBO 6 - - IE = 10 µA, IC = 0 Collector-base cutoff current ICBO - - 50 VCB = 30 V, IE = 0 DC current gain1) hFE IC = 100 µA, VCE = 1 V 40 - - IC = 1 mA, VCE = 1 V 70 - - IC = 10 mA, VCE = 1 V 100 - 300 IC = 50 mA, VCE = 1 V 60 - - IC = 100 mA, VCE = 1 V 30 - - Collector-emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA Base emitter saturation voltage1) IC = 10 mA, IB = 1 mA IC = 50 mA, IB = 5 mA VCEsat - - 0.
2 - - 0.
3 VBEsat 0.
65 - 0.
85 - - 0.
95 1Pulse test: t < 300µs; D < 2% Unit...


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