PZT2222

PZT2222 : PZT2222 / PZT2222A PZT2222 / PZT2222A NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage Version 2006-05-09 6.5±0.2 3±0.1 4 1.65 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Type Code 1 0.7 2.3 23 3.25 ±0.37 3.5±0.2 Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions - Maße [mm] 1 = B 2/4 = C 3 = E Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle NPN 1.3 W SOT-223 0.04 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-volt. - Kollektor-Basis-S.

PZT2222A : NPN switching transistor in a SOT223 plastic package. PNP complement: PZT2907A. handbook, halfpage PZT2222A PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 3 1 Top view 2 3 MAM287 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collecto.

PZT2222A : MMBT2222A / PZT2222A — NPN General-Purpose Amplifier July 2014 MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C E SOT-23 Mark:1P B Figure 1. MMBT2222A Device Package C SOT-223 E C B Figure 2. PZT2222A Device Package Ordering Information Part Number MMBT2222A PZT2222A Top Mark 1P 2222A Package SOT-23 3L SOT-223 4L Packing Method Tape and Reel Tape and Reel Absolute Maximum Ratings(1), (2) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating.

PZT2222A : PZT2222A Marking Code GT2222A VCBO Collector-Base Voltage 75 VCEO Collector-Emitter Voltage 40 VEBO Emitter-Base Voltage 6.0 IC(DC) Collector Current 600 Ptot TJ,TSTG Total Device Dissipation TA=25°C Operating Junction and Storage Temperature Range 1.5 -65 to +150 Unit V V V mA W °C TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/AH Page 1 of 5 SMD General Purpose Transistor (NPN) Electrical Characteristics (T Ambient=25ºC unless noted otherwise) PZT2222A Symbol Description hFE D.C. Current Gain V(BR)CBO V(BR)CEO V(BR)EBO Collector-Base Breakdown Vol.

PZT2222A : , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R207-001.G .

PZT2222A : PZT2222A NPN Silicon Planar Epitaxial Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 C) BASE 1 COLLECTOR 2, 4 3 EM ITTER SOT-223 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 4 Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Value 40 75 6.0 600 1.5 150 -65 to +150 Unit Vdc Vdc Vdc Adc W C C Device Marking PZT2222A=GT2222A ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 10 mAdc, IB=0) Collector-Base Breakdown Voltage (IC=10 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 10 µAdc, IC.

PZT2222A : PZT2222 / PZT2222A PZT2222 / PZT2222A NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage Version 2006-05-09 6.5±0.2 3±0.1 4 1.65 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Type Code 1 0.7 2.3 23 3.25 ±0.37 3.5±0.2 Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions - Maße [mm] 1 = B 2/4 = C 3 = E Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle NPN 1.3 W SOT-223 0.04 g Maximum ratings (TA = 25°C) Collector-Emitter-volt. - Kollektor-Emitter-Spannung Collector-Base-volt. - Kollektor-Basis-S.

PZT2222A : Elektronische Bauelemente RoHS Compliant Product PZT2222A NPN Silicon General Purpose Transistor C FEATURES Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.6 A Collector-base voltage V (BR)CBO : 75 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć E SOT-223  1. BASE 2. COLLECTOR 3. EMITTER f  f 5 5  0D[ efe efe f  efe  f   f  123 Unit : mm ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅ Parameter Symbol Test conditions MIN MAX Collector-base breakdown voltage V(BR)CBO Ic= 10­Aˈ IE=0 75 Collector-emitter breakdown volt.

PZT2222A : SMD Type Transistors NPN Transistors PZT2222A (KZT2222A) ■ Features ● Epitaxial planar die construction ● Complementary to PZT2907A SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 123 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating 75 40 6 600 1 150 -55 to 150 Unit V mA W ℃ www.kexin.com.cn 1 SMD Type Transistors NPN Transistors PZT.

PZT2222A : PZT2222A NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. Features • PNP Complement is PZT2907AT1 • The SOT−223 Package Can be Soldered Using Wave or Reflow • SOT−223 Package Ensures Level Mounting, Resulting in Improved Thermal Conduction, and Allows Visual Inspection of Soldered Joints • The Formed Leads Absorb Thermal Stress During Soldering, Eliminating the Possibility of Damage to the Die • Available in 12 mm Tape and Reel • S Prefix for Automotive and Other Applications Requiring Unique Site .

PZT2222A-C : Epitaxial Planar Die Construction. MARKING ZT2222A PACKAGE INFORMATION Package MPQ SOT-223 2.5K Leader Size 13 inch ORDER INFORMATION Part Number Type PZT2222A-C Lead (Pb)-free and Halogen-free SOT-223 A M Top View C B KL E 1 2 3 D F GH 4 J REF. A B C D E F Millimeter Min. Max. 5.90 6.70 6.70 7.30 3.30 3.80 1.42 1.90 4.45 4.75 0.60 0.85 REF. G H J K L M Millimeter Min. Max. - 0.18 2.00 REF. 0.20 0.40 1.10 REF. 2.30 REF. 2.80 3.20 MAXIMUM RATINGS (TA=25°C, unless otherwise specified) Parameter Symbol Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Collector Power Dissipation PD Junction and .

PZT2222AT1 : MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. • PNP Complement is PZT2907AT1 • The SOT-223 package can be soldered using wave or reflow. • SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. COLLECTOR • Available in 12 mm tape and reel 2, 4 Use PZT2222AT1 to order th.