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PZT2222A

SeCoS
Part Number PZT2222A
Manufacturer SeCoS
Description General Purpose Transistor
Published May 25, 2016
Detailed Description Elektronische Bauelemente RoHS Compliant Product PZT2222A NPN Silicon General Purpose Transistor C FEATURES Power d...
Datasheet PDF File PZT2222A PDF File

PZT2222A
PZT2222A

Overview
Elektronische Bauelemente RoHS Compliant Product PZT2222A NPN Silicon General Purpose Transistor C FEATURES Power dissipation C B P CM : 1 W˄Tamb=25ć˅ Collector current I CM : 0.
6 A Collector-base voltage V (BR)CBO : 75 V Operating and storage junction temperature range T JˈTstg: -55ć to +150ć E SOT-223  1.
BASE 2.
COLLECTOR 3.
EMITTER f  f 5 5  0D[ efe efe f  efe  f   f  123 Unit : mm ELECTRICAL CHARACTERISTICS˄Tamb=25ć unless otherwise specified˅ Parameter Symbol Test conditions MIN MAX Collector-base breakdown voltage V(BR)CBO Ic= 10­Aˈ IE=0 75 Collector-emitter breakdown voltage V(BR)CEO Ic= 10mAˈ IB=0 40 Emitter-base breakdown voltage V(BR)EBO IE=10­Aˈ IC=0 6 Collector cut-off current ICBO VCB=60V , IE=0 0.
01 Emitter cut-off current IEBO VEB= 3V , IC=0 0.
01 hFE(1) VCE=10V, IC= 0.
1mA 35 hFE(2) VCE=10V, IC= 1mA 50 DC current gain hFE(3) hFE(4) VCE=10V, IC= 10mA VCE=10V, IC= 150mA 75 100 300 hFE(5) VCE=1V, IC= 150mA 50 hFE(6) VCE=10V, IC= 500mA 40 Collector-emitter saturation voltage VCE(sat) VCE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB= 15mA 1 0.
3 Base-emitter saturation voltage VBE(sat) VBE(sat) IC=500 mA, IB= 50mA IC=150 mA, IB=15mA 0.
6 2.
0 1.
2 Transition frequency VCE=20V, IC= 20mA fT f=100MHz 300 Output Capacitance VCB=10V, IE= 0 Cob f=1MHz 8 Delay time Rise time Storage time Fall time td VCC=30V, IC=150mA tr VBE(off)=0.
5V,IB1=15mA tS VCC=30V, IC=150mA tf IB1= IB2= 15mA 10 25 225 60 UNIT V V V ­A ­A V V V V MHz pF nS nS nS nS http://www.
SeCoSGmbH.
com 01-Jun-2002 Rev.
A Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente ƔSWITCHING TIME EQUIVALENT TEST CIRCUITS PZT2222A NPN Silicon General Purpose Transistor hFE, DC CURRENT GAIN +16 V 0 -ā2 V 1.
0 to 100 μs, DUTY CYCLE ≈ 2.
0% < 2 ns 1 kΩ Figure 1.
Turn–On Time +ā30 V 200 +16 V 1.
0 to 100 μs,...


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