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PZT2222

Diotec
Part Number PZT2222
Manufacturer Diotec
Description Suface Mount Si-Epitaxial Planar Switching Transistors
Published May 25, 2016
Detailed Description PZT2222 / PZT2222A PZT2222 / PZT2222A NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-S...
Datasheet PDF File PZT2222 PDF File

PZT2222
PZT2222

Overview
PZT2222 / PZT2222A PZT2222 / PZT2222A NPN Suface Mount Si-Epitaxial Planar Switching Transistors Si-Epitaxie-Planar-Schalttransistoren für die Oberflächenmontage Version 2006-05-09 6.
5±0.
2 3±0.
1 4 1.
65 Power dissipation Verlustleistung Plastic case Kunststoffgehäuse Type Code 1 0.
7 2.
3 23 3.
25 ±0.
37 3.
5±0.
2 Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions - Maße [mm] 1 = B 2/4 = C 3 = E Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle NPN 1.
3 W SOT-223 0.
04 g Maximum ratings (TA = 25°C) Collector-Emitter-volt.
- Kollektor-Emitter-Spannung Collector-Base-volt.
- Kollektor-Basis-Spannung Emitter-Base-voltage - Emitter-Basis-Spannung Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur E open B open C open VCEO VCBO VEBO Ptot IC Tj TS Grenzwerte (TA = 25°C) PZT2222 PZT2222A 30 V 40 V 60 V 75 V 5V 6V 1.
3 W 1) 600 mA -55.
.
.
+150°C -55…+150°C Characteristics (Tj = 25°C) Collector-cutoff current – Kollektor-Reststrom IE = 0, VCB = 50 V PZT2222 PZT2222A IE = 0, VCB = 50 V, Tj = 150°C PZT2222 PZT2222A Emitter-cutoff current – Emitter-Reststrom IC = 0, VEB = 3 V Collector saturation voltage – Kollektor-Sättigungsspannung 2) IC = 150 mA, IB = 15 mA PZT2222 PZT2222A IC = 500 mA, IB = 50 mA PZT2222 PZT2222A ICBO ICBO ICBO ICBO IEBO VCEsat VCEsat VCEsat VCEsat Kennwerte (Tj = 25°C) Min.
Typ.
Max.
– – 20 nA – – 10 nA – – 20 µA – – 10 µA – –- 10 nA – – 0.
4 V – – 0.
3 V – – 1.
6 V – – 1.
0 V 1 Mounted on P.
C.
board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.
diotec.
com/ 1 PZT2222 / PZT2222A Characteristics (Tj = 25...


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