CY7C1325

CY7C132 : The CY7C132, CY7C136, CY7C136A, CY7C142, and CY7C146 are high speed CMOS 2K x 8 dual-port static RAMs. Two ports are provided to permit independent access to any location in memory. The CY7C132, CY7C136, and C.

CY7C1320AV18 : The CY7C1316AV18/CY7C1318AV18/CY7C1320AV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for Read and Write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1316AV18 that burst sequentially into or out of the device. The burst counter always starts with a “0” internally in the case.

CY7C1320BV18 : The CY7C1316BV18, CY7C1916BV18, CY7C1318BV18, and CY7C1320BV18 are 1.8V Synchronous Pipelined SRAM equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for Read and Write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1316BV18 and two 9-bit words in the case of CY7C1916BV18 that burst sequentially into or out of the devic.

CY7C1320CV18 : The CY7C1316CV18, CY7C1916CV18, CY7C1318CV18, and CY7C1320CV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1316CV18 and two 9-bit words in the case of CY7C1916CV18 that burst sequentially into or out of the de.

CY7C1320JV18 : The CY7C1316JV18, CY7C1916JV18, CY7C1318JV18, and CY7C1320JV18 are 1.8V Synchronous Pipelined SRAMs equipped with DDR-II architecture. The DDR-II consists of an SRAM core with advanced synchronous peripheral circuitry and a one-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1316JV18 and two 9-bit words in the case of CY7C1916JV18 that burst sequentially into or out of the de.

CY7C1320KV18 : The CY7C1316KV18, CY7C1916KV18, CY7C1318KV18, and CY7C1320KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. Each address location is associated with two 8-bit words in the case of CY7C1316KV18 and two 9-bit words in the case of CY7C1916KV18 that burst sequentially into or out of the devi.

CY7C1321BV18 : • 18-Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36) • 300-MHz clock for high bandwidth • 4-Word burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 600MHz) @ 300 MHz • Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches • Echo clocks (CQ and CQ) simplify data capture in high-speed systems • Synchronous internally self-timed writes • 1.8V core power supply with HSTL inputs and outputs • Variable drive HSTL output buffers • Expanded HSTL output voltage (1.4V–VDD) • Available in 165-ball FBGA package (13 x 15 x 1.4 mm) • Off.

CY7C1321KV18 : CY7C1319KV18 and CY7C1321KV18 are 1.8 V Synchronous Pipelined SRAMs equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a two-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock. Write data is registered on the rising edges of both K and K. Read data is driven on the rising edges of C and C if provided, or on the rising edge of K and K if C/C are not provided. For CY7C1319KV18 and CY7C1321KV18, the burst counter takes in the least two significant bits of the external address and bursts four 18-bit words in the case of CY7C1319KV18, and four 36-bit words in the case o.

CY7C1323BV25 : • 18-Mbit Density (512 Kbit x 36) • 167-MHz Clock for high bandwidth • 4-Word Burst for reducing address bus frequency • Double Data Rate (DDR) interfaces (data transferred at 333 MHz @ 167 MHz) • Two input clocks (K and K) for precise DDR timing – SRAM uses rising edges only • Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches. • Separate Port Selects for depth expansion • Synchronous internally self-timed writes • 2.5V core power supply with HSTL Inputs and Outputs • Available in 165-ball FBGA package (13 x 15 x 1.4 mm) • Variable drive HSTL output buffers • Expanded HSTL output voltage (1.4V–1.9V) • JTAG 1149.1 compatible test access port Configu.

CY7C1325G : The CY7C1325G is a 256K × 18 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchron.

CY7C1325H : The CY7C1325H is a 256K × 18 synchronous cache RAM designed to interface with high speed microprocessors with minimum glue logic. Maximum access delay from clock rise is 6.5 ns (133 MHz version). A 2-bit on-chip counter captures the first address in a burst and increments the address automatically for the rest of the burst access. All synchronous inputs are gated.

CY7C1327G : The CY7C1327G SRAM integrates 256K × 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered clock input (CLK). The synchronous inputs include all addresse.

CY7C1329 : The CY7C1329 is a 3.3V, 64K by 32 synchronous-pipelined cache SRAM designed to support zero wait state secondary cache with minimal glue logic. Logic Block Diagram CLK ADV ADSC ADSP A[15:0] GW BWE BW 3 BW2 MODE (A[1:0]) 2 BURST Q0 CE COUNTER Q1 CLR Q ADDRESS CE REGISTER D D DQ[31:24] Q BYTEWRITE REGISTERS 14 16 16 14 64KX32 MEMORY ARRAY D DQ[23:16] Q BYTEWRITE REGISTERS D Q DQ[15:8] BYTEWRITE REGISTERS Q DQ[7:0] BYTEWRITE REGISTERS BW1 D BW0 CE1 CE2 CE3 32 32 D ENABLE Q CE REGISTER CLK D Q ENABLE DELAY REGISTER CLK OUTPUT REGISTERS CLK INPUT REGISTERS CLK OE ZZ SLEEP CONTROL DQ[31:0] Intel and Pentium are registered trademarks of Intel Corporation. PowerPC is a trademark of IBM C.

CY7C1329H : The CY7C1329H SRAM integrates 64 K × 32 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK). The synchronous inputs include all add.