| Part Number | TPC6113 |
| Manufacturer | Toshiba Semiconductor |
| Title | P-Channel MOSFET |
| Description | TPC6113 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC6113 Lithium Ion Battery Applications Power Management Switch Appl... |
| Features |
heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maxim...
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| File Size | 205.42KB |
| Datasheet |
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TPC6110 : TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.DataSheet4U.com TPC6110 Power Management Switch Applications Unit: mm • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −30 −30 −25/+20 −4.5 −18 2.2 0.7 3.4 .
TPC6111 : TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) www.DataSheet4U.com TPC6111 Notebook PC Applications Portable Equipment Applications • • • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.3 to −1.0 V (VDS = −10 V, ID = −1mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±8 −5.5 −22 2.2 0.7 5.1 −2.8 0.019 150 −55~150 Unit V V V A.