DatasheetsPDF.com

TPC6110

Toshiba Semiconductor
Part Number TPC6110
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.DataSheet4U.com TPC6110 Power Managemen...
Datasheet PDF File TPC6110 PDF File

TPC6110
TPC6110

Overview
TPC6110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.
DataSheet4U.
com TPC6110 Power Management Switch Applications Unit: mm • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 43 mΩ (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −0.
1mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −30 −30 −25/+20 −4.
5 −18 2.
2 0.
7 3.
4 −2.
3 0.
025 150 −55 to 150 Unit V V V A Drain power dissipation Drain power dissipation JEDEC W W mJ A mJ °C °C ― ― 2-3T1A JEITA TOSHIBA Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.
011 g (typ.
) Not...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)