DatasheetsPDF.com

TPC6111

Toshiba Semiconductor
Part Number TPC6111
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Mar 16, 2010
Detailed Description TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) www.DataSheet4U.com TPC6111 Notebook PC App...
Datasheet PDF File TPC6111 PDF File

TPC6111
TPC6111

Overview
TPC6111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV) www.
DataSheet4U.
com TPC6111 Notebook PC Applications Portable Equipment Applications • • • Low drain-source ON resistance: RDS (ON) = 33 mΩ (typ.
) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.
3 to −1.
0 V (VDS = −10 V, ID = −1mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating −20 −20 ±8 −5.
5 −22 2.
2 0.
7 5.
1 −2.
8 0.
019 150 −55~150 Unit V V V A W W mJ A mJ °C °C Drain power dissipation Drain power dissipation JEDEC JEITA TOSHIBA ― ― 2-3T1A Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range Weight: 0.
011 g (typ.
) Note: Using continuously under heavy loads...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)