MMBT7002K
N-Channel Enhancement Mode Field Effect
Transistor
Features • Low on resistance RDS(ON) • Low gate threshold voltage
• Low input capacitance • ESD protected up to 2KV
Drain
Gate
Source
1.
Gate 2.
Source 3.
Drain SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Continuous)
Drain Current (Pulse Width ≤ 10 µs)
Total Power Dissipation
Operating and Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Drain Source Breakdown Voltage at ID = 10 µA Zero Gate Voltage Drain Current at VDS = 60 V Gate-Source Leakage Current at VGS = ± 20 V Gate Threshold Voltage at VDS = 10 V, ID = 250 µA Static Drai...