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MMBT7002K

Diotec
Part Number MMBT7002K
Manufacturer Diotec
Description N-Channel MOSFET
Published May 22, 2016
Detailed Description MMBT7002K MMBT7002K N N-Channel Enhancement Mode FET with protected Gate N-Kanal FET mit Gateschutzdiode – Anreicheru...
Datasheet PDF File MMBT7002K PDF File

MMBT7002K
MMBT7002K


Overview
MMBT7002K MMBT7002K N N-Channel Enhancement Mode FET with protected Gate N-Kanal FET mit Gateschutzdiode – Anreicherungstyp Version 2011-02-01 2.
9 ±0.
1 0.
4 3 Type Code 1 2 1.
1 1.
9 Dimensions - Maße [mm] 1=G 2=S 3=D 2.
5 max 1.
3±0.
1 Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx.
– Gewicht ca.
Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle N 350 mW SOT-23 (TO-236) 0.
01 g Maximum ratings (TA = 25°C) Drain-Source-voltage – Drain-Source-Spannung Gate-Source-voltage – Gate-Source-Spannung dc ESD Power dissipation – Verlustleistung Drain current continuos – Drainstrom (dc) Drain current pulsed – Drainstrom gepulst tp < 10 µs Operating Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur VDSS VGSS VGSS Ptot ID IDM Tj TS Grenzwerte (TA = 25°C) MMBT7002K 60 V ± 20 V ± 2 kV 350 mW 115 mA 800 mA 150°C -55…+150°C © Diotec Semiconductor AG http://www.
diotec.
com/ 1 MMBT7002K Characteristics (Tj = 25°C) Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 10 µA Drain-Source leakage current – Drain-Source Leckstrom BVDSS G short VDS = 60 V Gate-Source leakage current – Gate-Source Leckstrom IDSS VGS = 20 V Gate-Threshold voltage – Gate-Source Schwellspannung ±IGSS VGS = VDS, ID = 250 µA Drain-Source on-voltage – Drain-Source-Spannung VGS(th) VGS = 10 V, ID = 500 mA VGS = 5 V, ID = 50 mA VDS(on) Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 500 mA VGS = 4.
5 V, ID = 200 mA Forward Transconductance – Übertragungssteilheit VDS ≥ 10 VDS(on), ID = 200 mA Input Capacitance – Eingangskapazität RDS(on) RDS(on) gFS VDS = 25 V, f = 1 MHz Output Capacitance – Ausgangskapazität Ciss VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität Coss VDS = 25 V, f = 1 MHz Turn-On Time – Einschaltzeit Crss ...


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