isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=8A@ TC=25℃ ·Drain Source Voltage-
: VDSS=200V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·low on–resistance ·High speed switching ·Low drive current ·No secondary breakdown ·Suitable for switching
regulator, DC–DC convertor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
8
A
Ptot
Total Dissipation@TC=25℃
100
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-...