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2SK4003

Toshiba Semiconductor
Part Number 2SK4003
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Nov 27, 2009
Detailed Description 2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4003 Chopper Regulator, DC/DC Converte...
Datasheet PDF File 2SK4003 PDF File

2SK4003
2SK4003

Overview
2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications ６．５±０．２ Unit: mm １．５±０．２ z Low drain−source ON-resistance z Low leakage current z Enhancement mode : RDS (ON) = 1.
7 Ω (typ.
) ５．２±０．２ ０．６ MAX． : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) １．６ ５．５±０．２ : IDSS = 100 μA (max) (VDS = 600 V) ０．９ ４．１±０．２ １．１±０．２ ５．７ ０．６ MAX Absolute Maximum Ratings (Ta = 25°C) ２．３ ２．３ Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC Drain current Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 3 12 20 168 3 2 150 −55~150 Unit １ ２ ３ V V V ０．８ MAX． １．1 MAX． ０．６±０．１５ ０．６±０．１５ A A W mJ A mJ °C °C ２．３±０．２ Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-7J2B Weight: 0.
36 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate www.
DataSheet4U.
com reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristic Thermal resistance, channel to ambient Symbol Rth (ch−a) Max 125 Unit °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 8.
2 mH, RG = 25 Ω, IAR = 6 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is a...


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