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2SK4002

Toshiba Semiconductor
Part Number 2SK4002
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Nov 27, 2009
Detailed Description 2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4002 Chopper Regulator, DC/DC Converte...
Datasheet PDF File 2SK4002 PDF File

2SK4002
2SK4002

Overview
2SK4002 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS V) 2SK4002 Chopper Regulator, DC/DC Converter and Motor Drive Applications ６．５±０．２ Unit: mm １．５±０．２ z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 4.
2 Ω (typ.
) ５．２±０．２ ０．６ MAX． : Vth = 2.
0~4.
0 V (VDS = 10 V, ID = 1 mA) １．６ ５．５±０．２ : |Yfs| = 1.
7 S (typ.
) : IDSS = 100 μA (max) (VDS = 600 V) ０．９ １．１±０．２ ４．１±０．２ ５．７ ０．６ MAX Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage DC (Note 1) Symbol VDSS VDGR VGSS ID IDP IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 Unit V V V ０．８ MAX． １．1 MAX． １ ２．３ ２．３ ２．３±０．２ ０．６±０．１５ ０．６±０．１５ ２ ３ A A A W mJ A mJ °C °C Drain current Pulse (t = 1 ms) (Note 1) Pulse (t = 100 μs) (Note 1) JEDEC JEITA ― ― 2-7J2B 8 20 93 2 2 150 −55~150 TOSHIBA Drain power dissipation (Tc = 25°C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Weight: 0.
36 g (typ.
) www.
DataSheet4U.
com Storage temperature range Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch−c) Rth (ch−a) Max 6.
25 125 Unit °C / W °C / W Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:...


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