isc N-Channel MOSFET
Transistor
DESCRIPTION ·Drain Current –ID=3A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 800V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High voltage,high speed power Switching .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
800
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
3
A
Ptot
Total Dissipation@TC=25℃
80
W
Tj
Max.
Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SK415
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