INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
3DD102B
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.
) ·DC Current Gain-
: hFE= 20(Min.
)@IC= 2A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.
8V(Max)@ IC= 2.
5A
APPLICATIONS ·Designed for power amplifier,DC-DC converter and regulated
power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200 V
VCEO Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
W
TJ Junction Temperature
175 ℃
Tstg Storage Temperature
-55~175...